PART |
Description |
Maker |
FLM5964-18DA |
Internally Matched Power GaAs FETs
|
Fujitsu
|
MGFC36V5258 MGFC36V525811 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
FLM1414-4F |
Internally Matched Power GaAs FET 内部匹配砷化镓场效应
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Sumitomo Electric Industries, Ltd.
|
MGFC39V5964A MGFC39V5964A11 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFC39V6472A MGFC39V6472A11 |
C band internally matched power GaAs FET
|
http://
|
MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TIM1213-4L |
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
|
Toshiba Corporation Toshiba Semiconductor
|
MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET From old datasheet system 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V6472 |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET 6.4-7.2 GHz Band 16W Internally Matched GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|